CPC3909 Datasheet, PDF (4/7 Pages) IXYS Corporation – Depletion-Mode FET

INTEGRATED CIRCUITS DIVISION
PRELIMINARY
PERFORMANCE DATA @ 25ºC (Unless Otherwise Noted)*
CPC3909
On-Resistance vs. Drain Current
(V_GS=0V)
10
125ºC
8
6
25ºC
4
-40ºC
2
0
0.0
0.2
0.4
0.6
0.8
1.0
I_D (mA)
On-Resistance vs. Temperature
(I_L=300mA, V_GS=0V)
10
9
8
7
6
5
4
3
2
-50 -25
0 25 50 75 100 125 150
Temperature (ºC)
Blocking Voltage vs. Temperature
(I_L=5PA)
520
510
500
490
480
470
460
-50 -25
0 25 50 75 100 125 150
Temperature (ºC)
Leakage Current vs. Temperature
(V_GS=5V, V_DS=400V)
1.2
1.0
0.8
0.6
0.4
0.2
0
-50 -25
0 25 50 75 100 125 150
Temperature (ºC)
Capacitance vs. Drain-Source Voltage
(V_GS=-3.5V)
300
250
200
CISS
150
100
50
0
0
COSS
CRSS
5 10 15 20 25 30 35
V_DS (V)
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please
contact our application department.
4
PRELIMINARY
R00D