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| CPC3909 Datasheet, PDF (1/7 Pages) IXYS Corporation – Depletion-Mode FET | |||
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INTEGRATED CIRCUITS DIVISION
PRELIMINARY
CPC3909
400V N-Channel
Depletion-Mode FET
Parameter
Drain-to-Source Voltage - V(BR)DSX
Max On-Resistance - RDS(on)
Max Power
SOT-89 Package
SOT-223 Package
Rating
400
6
1.1
2.5
Units
V
ï
W
Features
⢠400V Drain-to-Source Voltage
⢠Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
⢠Low On-Resistance: 4.5ï (Typical) @ 25°C
⢠Low VGS(off) Voltage
⢠High Input Impedance
⢠Low Input and Output Leakage
⢠Small Package Size SOT-89 and SOT-223
⢠PC Card (PCMCIA) Compatible
⢠PCB Space and Cost Savings
Applications
⢠LED Drive Circuits
⢠Telecommunications
⢠Normally On Switches
⢠Ignition Modules
⢠Converters
⢠Security
⢠Power Supplies
⢠Regulators
Description
The CPC3909 is an N-channel, depletion mode Field
Effect Transistor (FET) that is available in an
SOT-223 package (CPC3909Z) and an SOT-89
package (CPC3909C). Both utilize IXYS Integrated
Circuits Divisionâs proprietary vertical DMOS process
that realizes world class, high voltage MOSFET
performance in an economical silicon gate process.
The vertical DMOS process yields a highly reliable
device, particularly for use in difficult application
environments such as telecommunications, security,
and power supplies.
CPC3909Z and the CPC3909C have a typical
on-resistance of 4.5ï and a drain-to-source voltage
of 400V. As with all MOS devices, the FET structure
prevents thermal runaway and thermally induced
secondary breakdown.
Ordering Information
Part Number
CPC3909CTR
CPC3909ZTR
Description
SOT-89: Tape and Reel (1000/Reel)
SOT-223: Tape and Reel (1000/Reel)
Circuit Symbol
D
G
S
Package Pinout:
D
4
123
GDS
Pin Number
1
2
3
4
Name
GATE
DRAIN
SOURCE
DRAIN
DS-CPC3909-R00D
PRELIMINARY
1
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