English
Language : 

CPC3909 Datasheet, PDF (2/7 Pages) IXYS Corporation – Depletion-Mode FET
INTEGRATED CIRCUITS DIVISION
PRELIMINARY
CPC3909
Absolute Maximum Ratings @ 25ºC
Parameter
Ratings Units
Drain-to-Source Voltage (V(BR)DSX)
Gate-to-Source Voltage (VGS)
Total Package Dissipation 1
400
V
15
V
SOT-89
SOT-223
Operational Temperature
Storage Temperature
1.1
W
2.5
-40 to +110 oC
-40 to +125 oC
1 Mounted on 1"x1" FR4 board.
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Typical values are characteristic of the device at +25°C, and
are the result of engineering evaluations. They are provided for
information purposes only, and are not part of the manufacturing
testing requirements.
Electrical Characteristics @25oC (Unless Otherwise Specified)
Parameter
Gate-to-Source Off Voltage
Drain-to-Source Leakage Current
Drain Current
On-Resistance
Gate Leakage Current
Gate Capacitance
Symbol
VGS(off)
IDS(off)
ID
RDS(on)
IGSS
CISS
Conditions
Min
ID=1A, VDS=5V
-1.4
VGS= -5.5V, VDS=240V
-
VGS= -5.5V, VDS=400V
-
VGS= 0V, VDS=5V
300
VGS= 0V, IDS=300mA
-
VGS=15V
-
VDS= VGS=0V
-
Typ Max Units
-
-3.1
V
-
20
nA
-
1
A
-
-
mA
4.5
6

-
100
nA
-
275
pF
Thermal Resistance
Device
Parameter
SOT-89 (CPC3909C) Junction to Case
Junction to Ambient
SOT-223 (CPC3909Z) Junction to Case
Junction to Ambient
Symbol
RJC
RJA
RJC
RJA
Conditions
-
-
Min Typ Max Units
50
-
-
90
ºC/W
14
-
-
55
2
PRELIMINARY
R00D