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IXFB80N50Q2_07 Datasheet, PDF (3/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs
Fig. 1. Output Characte ristics
@ 25 De g. C
80
VGS = 10V
70
8V
7V
60
50
40
6V
30
20
10
5V
0
0
1
2
3
4
5
6
VD S - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
80
VGS = 10V
70
8V
7V
60
50
6V
40
30
20
5V
10
0
0
2
4
6
8
10
12
VD S - Volts
Fig. 5. RDS(on) Norm alize d to
ID = 40A Value vs . Drain Curre nt
3
2.8
VGS = 10V
2.6
TJ = 125ºC
2.4
2.2
2
1.8
1.6
1.4
1.2
TJ = 25ºC
1
0.8
0
40
80
120
160
200
I D - Amperes
© 2007 IXYS CORPORATION, All rights reserved
IXFB80N50Q2
Fig. 2. Extended Output Characteristics
@ 25 deg. C
200
180
VGS = 10V
9V
160
8V
140
7V
120
100
80
60
6V
40
20
5V
0
0 2 4 6 8 10 12 14 16 18 20
VD S - Volts
Fig. 4. RDS(on) Norm alize d to ID = 40A
Value vs. Junction Tem perature
3
2. 8
VGS = 10V
2. 6
2. 4
2. 2
2
1. 8
ID = 80A
1. 6
1. 4
ID = 40A
1. 2
1
0. 8
0. 6
0. 4
-50 -25
0
25
50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
90
80
External Lead Current Limit
70
60
50
40
30
20
10
0
-50 -25
0
25
50 75 100 125 150
TC - Degrees Centigrade