IXFB80N50Q2_07 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs

HiPerFET^TM
Power MOSFETs
IXFB80N50Q2
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, Low Intrinsic R_G
High dV/dt, Low t_rr
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DRMS
I_DM
I_AR
E_AR
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T
SOLD
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
External lead limited
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6 mm (0.063 in.) from case for 10s
Plastic body for 10s
Mounting force
Maximum Ratings
500
V
500
V
± 30
V
± 40
V
80
A
75
A
320
A
80
A
60
mJ
5.0
J
20
V/ns
960
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
30...120/6.7...27
N / lbs
10
g
Symbol
BV_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
Min. Typ. Max.
V_GS = 0 V, I_D = 1mA
500
V
V_DS = V_GS, I_D = 8mA
3.0
5.5 V
V_GS = ±30 V, V_DS = 0V
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
± 200 nA
100 μA
5 mA
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
60 mΩ
V_DSS =
I_D25 =
R_DS(on) ≤
t_rr
≤
500V
80A
60mΩ
250ns
PLUS264^TM( IXFB)
G
D
S
( TAB )
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{Double metal process for low gate}
resistance
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
z _{Fast intrinsic rectifier}
Applications
z _{DC-DC converters}
z _{Switched-mode and resonant-mode}
power supplies, >500kHz switching
z _{DC choppers}
z _{Pulse generation}
z _{Laser drivers}
Advantages
z _{PLUS 264}TM _{package for clip or spring}
mounting
z _{Space savings}
z _{High power density}
© 2007 IXYS CORPORATION, All rights reserved
DS98958F(07/07)