IXFB80N50Q2_07 Datasheet, PDF (2/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs

Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
g_fs
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g(on)
Q_gs
Q_gd
R_thJC
R_thCK
V_DS = 10V, I_D = 0.5 • I_D25, Note 1
V_GS = 0V, V_DS = 25V, f = 1MHz
Resistive Switching Times
V_GS = 10V, V_DS = 0.5 • V_DSS, I_D = 0.5 • I_D25
R_G = 1Ω (External)
V_GS = 10V, V_DS = 0.5 • V_DSS, I_D = 0.5 • I_D25
50 65
15
1610
300
29
25
60
11
250
80
120
0.13
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.13 °C/W
°C/W
IXFB80N50Q2
PLUS264^TM (IXFB) Outline
Source-Drain Diode
Symbol
Test Conditions
I_S
V_GS = 0V
I_SM
Repetitive;
pulse width limited by T_JM
V_SD
I_F = I_S, V_GS = 0V, Note 1
t_rr
I_F = 25A, V_GS = 0V
Q_RM
-di/dt = 100 A/μs
V_R = 100 V
I_RM
Characteristic Values
(T_J = 25°C, unless otherwise specified)
Min. Typ.
Max.
80
A
320
A
1.5
V
250 ns
1.4
μC
12
A
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734B2
6,710,405B2 6,759,692
6,710,463
6771478 B2