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DE475-102N21A_09 Datasheet, PDF (3/5 Pages) IXYS Corporation – RF Power MOSFET
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Fig. 1
Typical Transfer Characteristics
VDS = 50V, ID = 12A
Fig. 2
70
60
50
40
30
20
10
0
5 6 7 8 9 10 11 12 13 14 15
VGS, Gate-to Source Voltage (V)
30
25
20
15
10
5
0
0
DE475-102N21A
RF Power MOSFET
Typical Output Characteristics
PW = 15 µS
Top
Bottom
7.5-15V
7V
6.5V
6V
5.5V
25
50
75
100
125
VDS, Drain-to-Source Voltage (V)
Fig. 3
Gate Charge vs. Gate-to-Source Voltage
VDS = 500V, ID = 12A
Fig. 4
Extended Typical Output Characteristics
PW = 15 µS
16
14
12
10
8
6
4
2
0
0
Fig. 5
10000
100
80
60
Top
Bottom
9-15V
8.5V
8V
7.5V
7V
6.5V
6V
40
20
0
50
100
150
200
250
0
25
50
75
100
125
Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
VDS vs. Capacitance
Ciss
1000
Coss
100
Crss
10
0
100 200 300 400 500 600 700 800
VDS Voltage (V)
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