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| DE475-102N21A_09 Datasheet, PDF (2/5 Pages) IXYS Corporation – RF Power MOSFET | |||
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Symbol
Test Conditions
DE475-102N21A
RF Power MOSFET
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
max.
RG
Ciss
Coss
Crss
Cstray
Td(on)
Ton
Td(off)
Toff
Qg(on)
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
Back Metal to any Pin
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 ⦠(External)
0.3
â¦
5500
pF
190
pF
52
pF
46
pF
5
ns
5
ns
5
ns
8
ns
155
nC
Qgs
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25
Qgd
Source-Drain Diode
Symbol
Test Conditions
33
84
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
nC
nC
max.
IS
ISM
VSD
Trr
QRM
IRM
VGS = 0 V
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V,
Pulse test, t ⤠300 µs, duty cycle ⤠2%
IF = IS, -di/dt = 100A/µs,
VR = 100V
21
A
144
A
1.5
V
200
ns
0.6
µC
8
A
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.
For detailed device mounting and installation instructions, see the âDevice Installation & Mounting Instructionsâ technical note on the
IXYSRF web site at;
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
5,034,796
5,381,025
4,860,072
5,049,961
5,640,045
4,881,106
5,063,307
4,891,686
5,187,117
4,931,844
5,237,481
5,017,508
5,486,715
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