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DE475-102N21A_09 Datasheet, PDF (1/5 Pages) IXYS Corporation – RF Power MOSFET | |||
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⦠N-Channel Enhancement Mode
⦠Low Qg and Rg
⦠High dv/dt
⦠Nanosecond Switching
⦠30MHz Maximum Frequency
Symbol Test Conditions
DE475-102N21A
RF Power MOSFET
Maximum Ratings
VDSS = 1000 V
ID25
= 24 A
RDS(on) ⤠0.45 â¦
VDSS
VDGR
VGS
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 Mâ¦
Continuous
1000
V
1000
V
±20
V
PDC
= 1800W
VGSM
ID25
IDM
IAR
EAR
dv/dt
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
IS ⤠IDM, di/dt ⤠ï°100A/µs, VDD ⤠VDSS,
Tj ⤠150°C, RG = 0.2â¦
IS = 0
±30
V
24
A
144
A
21
A
30 mJ
5 V/ns
>200 V/ns
PDC
PDHS
PDAMB
RthJC
RthJHS
Tc = 25°C
Derate 4.0W/°C above 25°C
Tc = 25°C
1800
730
W
W GATE
4.5 W
0.08 C/W
0.20 C/W
SG1 SG2
DRAIN
SD1 SD2
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
TJ
TJM
Tstg
TL
Weight
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
VGS = 0 V, ID = 3 ma
VDS = VGS, ID = 4 ma
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
min.
1000
3.5
VGS = 15 V, ID = 0.5ID25
Pulse test, t ⤠300µS, duty cycle d ⤠2%
VDS = 15 V, ID = 0.5ID25, pulse test
-55
-55
typ. max.
V
4.4
5.5 V
±100 nA
50 µA
1 mA
0.45 â¦
12
S
+175 °C
175
°C
+175 °C
Features
⢠Isolated Substrate
â high isolation voltage (>2500V)
â excellent thermal transfer
â Increased temperature and power
cycling capability
⢠IXYS advanced low Qg process
⢠Low gate charge and capacitances
â easier to drive
â faster switching
⢠Low RDS(on)
⢠Very low insertion inductance (<2nH)
⢠No beryllium oxide (BeO) or other haz-
ardous materials
Advantages
⢠Optimized for RF and high speed
switching at frequencies to 30MHz
⢠Easy to mountâno insulators needed
⢠High power density
1.6mm (0.063 in) from case for 10 s
300
°C
3
g
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