DE475-102N20A Datasheet, PDF (3/5 Pages) IXYS Corporation – RF Power MOSFET

Fig. 1
60
50
40
30
Typical Transfer Characteristics
V_DS = 50V, PW = 15µS
Fig. 2
40
30
20
DE475-102N20A
RF Power MOSFET
Typical Output Characteristics
Top
Bottom
8-10V
7.5V
7V
6.5V
6V
5.5V
5V
20
10
10
0
4
5
6
7
8
9
10 11
Fig. 3
V_GS, Gate-to Source Voltage (V)
Gate Charge vs. Gate-to-Source Voltage
V_GS = 500V, I_D = 10A, Ig = 4m A
16
14
12
10
8
6
0
12
0
Fig. 4
10 20 30 40 50 60 70 80 90 100 110 120
V_DS, Drain-to-Source Voltage (V)
Extended Typical Output Characteristics
80
Top
9-10V
8V
7.5V
7V
60
6.5V
6V
Bottom 5.5V
40
4
20
2
0
0
Fig. 5
0
50
100
150
200
250
0
Gate Charge (nC)
25
50
75
100
125
V_DS, Drain-to-Source Voltage (V)
10000
VD S vs. Capacitance
Ciss
1000
Coss
100
Crss
10
1
0
100 200 300 400 500 600 700 800
VDS Voltage (V)