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| DE475-102N20A Datasheet, PDF (2/5 Pages) IXYS Corporation – RF Power MOSFET | |||
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Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
RG
Ciss
Coss
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
Crss
Cstray
Back Metal to any Pin
Td(on)
Ton
Td(off)
Toff
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 ⦠(External)
Qg(on)
Qgs
Qgd
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25
DE475-102N20A
RF Power MOSFET
Characteristic Values
min.
typ.
max.
0.3
â¦
6200
pF
185
pF
44
pF
46
pF
5
ns
5
ns
5
ns
8
ns
145
nC
28
nC
68
nC
Source-Drain Diode
Symbol
IS
ISM
VSD
Trr
QRM
IRM
Test Conditions
VGS = 0 V
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V,
Pulse test, t ⤠300 µs, duty cycle ⤠2%
IF = IS, -di/dt = 100A/µs,
VR = 100V
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ.
200
0.6
14
max.
20
A
120
A
1.5
V
ns
µC
A
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.
For detailed device mounting and installation instructions, see the âDevice Installation & Mounting Instructionsâ technical note on the
IXYSRF web site at;
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
4,860,072
4,881,106
4,891,686
5,034,796
5,049,961
5,063,307
5,187,117
5,381,025
5,640,045
4,931,844
5,237,481
5,017,508
5,486,715
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