DE475-102N20A Datasheet, PDF (1/5 Pages) IXYS Corporation – RF Power MOSFET

DE475-102N20A
RF Power MOSFET
N-Channel Enhancement Mode
Low Q_g and R_g
High dv/dt
Nanosecond Switching
V_DSS
I_D25
= 1000 V
= 20 A
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
P_DC
P_DHS
P_DAMB
R_thJC
R_thJHS
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
Maximum Ratings
1000 V
R_DS(on) ≤ _{0.6 Ω}
P_DC
= 1800W
T_J = 25°C to 150°C; R_GS = 1 MΩ
1000 V
Continuous
±20 V
Transient
±30 V
T_c = 25°C
20 A
T_c = 25°C, pulse width limited by T_JM
120 A
T_c = 25°C
20 A
T_c = 25°C
30 mJ
I_S ≤ I_DM, di/dt ≤ 100A/µs, V_DD ≤ V_DSS,
T_j ≤ 150°C, R_G = 0.2Ω
I_S = 0
T_c = 25°C
Derate 4.4W/°C above 25°C
T_c = 25°C
5 V/ns
>200 V/ns
1800
730
W
GATE
W
4.5 W
DRAIN
0.08 C/W
0.20 C/W
Test Conditions
Characteristic Values
T_J = 25°C unless otherwise specified
V_GS = 0 V, I_D = 3 ma
V_DS = V_GS, I_D = 250 µa
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 V_DSS T_J = 25°C
V_GS = 0
T_J = 125°C
min.
1000
3.0
V_GS = 15 V, I_D = 0.5I_D25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
typ.
3.6
max.
V
5.0 V
±100 nA
50 µA
1 mA
0.6 Ω
SG1 SG2
SD1 SD2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Q_g process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low R_DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
g_fs
T_J
T_JM
T_stg
T_L
Weight
V_DS = 15 V, I_D = 0.5I_D25, pulse test
1.6mm (0.063 in) from case for 10 s
6
9
S ^Advantages
-55
+150 °C
• Optimized for RF and high speed
switching at frequencies to 30MHz
150
°C
• Easy to mount—no insulators needed
• High power density
-55
+150 °C
300
°C
3
g