CPC3980 Datasheet, PDF (3/5 Pages) IXYS Corporation – N-Channel Depletion-Mode

INTEGRATED CIRCUITS DIVISION
CPC3980
PERFORMANCE DATA @25ºC (Unless Otherwise Noted)*
Threshold Voltage vs. Temperature
(I_D=1PA, V_DS=10V)
-1.6
-1.7
-1.8
-1.9
-2.0
-2.1
-50 -25
0 25 50 75 100 125
Temperature (ºC)
On-Resistance vs. Temperature
(I_D=100mA, V_GS=5V)
70
60
50
40
30
20
-50 -25
0 25 50 75 100 125
Temperature (ºC)
Power Dissipation
vs. Ambient Temperature
2.0
1.5
1.0
0.5
0.0
0
20 40 60 80 100 120 140
Temperature (ºC)
Forward Safe Operating Bias
(V_GS=0, DC Load)
1
Capacitance vs. Drain-Source Voltage
1000
(V_GS=3.5V)
0.1
0.01
Limited by device R_DS(on)
100
10
C_ISS
C_RSS
C_OSS
Limited by device channel saturation
0.001
0.1
1
10
100
Voltage (V)
1000
1
0
5
10 15 20 25 30
V_DS (V)
100
80
60
40
20
0
0
Output Characteristics
V_GS= -1
V_GS= -1.2
V_GS= -1.4
V_GS= -1.6
2
4
6
8
10
V_DS (V)
On-Resistance vs. Drain Current
(V_GS=0V)
40
35
30
25
20
0
20
40
60
80
100
I_D (mA)
120
100
80
60
40
20
0
-2.5
Input Admittance
(V_DS=10V)
85ºC
55ºC
25ºC
-40ºC
-2.0
-1.5
-1.0
V_GS (V)
Transconductance vs. Drain Current
(V_DS=10V)
300
-40ºC
250
25ºC
55ºC
85ºC
200
150
100
50
0
-0.5
0
20
40
60
80
100
I_D (mA)
*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written specifications, please
contact our application department.
R02
www.ixysic.com
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