CPC3980 Datasheet, PDF (1/5 Pages) IXYS Corporation – N-Channel Depletion-Mode

INTEGRATED CIRCUITS DIVISION
BV_DSX/
BV_DGX
800V
R_DS(on)
(max)
45
I_DSS (min)
100mA
Package
SOT-223
Features
• High Breakdown Voltage: 800V
• Low On-Resistance: 45 max. at 25ºC
• Low V_GS(off) Voltage: -1.4 to -3.1V
• High Input Impedance
• Small Package Size: SOT-223
Applications
• Normally-On Switches
• Solid State Relays
• Converters
• Telecommunications
• Power Supply
• Current Regulators
Package Pinout
D
4
123
GDS
CPC3980
N-Channel Depletion-Mode
Vertical DMOS FET
Description
The CPC3980 is an 800V, N-channel,
depletion-mode, Field Effect Transistor (FET) created
using IXYS Integrated Circuits Division’s proprietary
vertical DMOS process. Yielding a robust device with
high input impedance, this process enables world
class, high voltage MOSFET performance with an
economical silicon gate architecture.
As with all MOS devices, the FET structure prevents
thermal runaway and thermal-induced secondary
breakdown, which makes the CPC3980 ideal for use
in high-power applications.
The CPC3980 is a highly reliable FET device that
has been used extensively in IXYS Integrated Circuits
Division’s Solid State Relays for industrial and
telecommunications applications.
The CPC3980 is available in the SOT-223 package.
Ordering Information
Part #
CPC3980ZTR
Description
SOT-223: Tape and Reel (1000/Reel)
Circuit Symbol
D
G
S
DS-CPC3980-R02
www.ixysic.com
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