CPC3980 Datasheet, PDF (2/5 Pages) IXYS Corporation – N-Channel Depletion-Mode

INTEGRATED CIRCUITS DIVISION
Absolute Maximum Ratings @ 25ºC
Parameter
Ratings Units
Drain-to-Source Voltage
800
V
Gate-to-Source Voltage
±15
V
Pulsed Drain Current
Total Package Dissipation ¹
150
mA
1.8
W
Operational Temperature
-55 to +125 ºC
Junction Temperature, Maximum
+125
ºC
Storage Temperature
-55 to +125 ºC
1 _{Mounted on 1"x1" 2 oz. Copper FR4 board.}
CPC3980
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Electrical Characteristics @ 25ºC (Unless Otherwise Noted)
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Off Voltage
Change in V_GS(off) with Temperature
Gate Body Leakage Current
Drain-to-Source Leakage Current
Saturated Drain-to-Source Current
Static Drain-to-Source On-State Resistance
Change in R_DS(on) with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Voltage Drop
Thermal Resistance
Junction to Ambient
Junction to Case
Symbol
BV_DSX
V_GS(off)
dV_GS(off) /dT
I_GSS
I_D(off)
I_DSS
R_DS(on)
dR_DS(on) /dT
G_fs
C_ISS
C_OSS
C_RSS
V_SD
_JA
_JC
Conditions
V_GS= -5.5V, I_D=100µA
V_DS= 15V, I_D=1A
V_DS= 15V, I_D=1A
V_GS=±15V, V_DS=0V
V_GS= -5.5V, V_DS=800V
V_GS= 0V, V_DS=15V
V_GS= 0V, I_D=100mA, V_DS=10V
I_D= 50mA, V_DS = 10V
V_GS= -3.5V
V_DS= 25V
f= 1MHz
V_GS= -5V, I_SD=150mA
-
-
Min Typ Max Units
800
-
-
V
-1.4
-
-3.1
V
-
-
4.5 mV/ºC
-
- 100 nA
-
-
1
µA
100
-
-
mA
-
-
45

-
-
2.5 %/ºC
100
-
-
m
115
-
5
-
pF
3
- 0.72 1
V
-
55
-
ºC/W
-
23
-
2
www.ixysic.com
R02