IS62VV25616L Datasheet, PDF (9/10 Pages) Integrated Silicon Solution, Inc – 256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM

IS62VV25616LL
ISSI ^®
WRITE CYCLE NO. 4 (UB/LB Controlled)
ADDRESS
OE
CE _LOW
t WC
ADDRESS 1
t SA
WE
UB, LB
DOUT
DIN
t PBW
t HZWE
DATA UNDEFINED
WORD 1
HIGH-Z
t SD
DATAIN
VALID
t WC
ADDRESS 2
t HA
t SA
t PBW
WORD 2
t HA
t LZWE
t HD
t SD
DATAIN
VALID
t HD
UB_CSWR4.eps
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol
VDR
IDR
tSDR
tRDR
Parameter
Vdd for Data Retention
Data Retention Current
Data Retention Setup Time
Recovery Time
Test Condition
See Data Retention Waveform
VDD = 1.0V, CE ≥ VDD – 0.2V
See Data Retention Waveform
See Data Retention Waveform
Min. Max. Unit
1.0 2.25
V
— 10
µA
0—
ns
tRC —
ns
DATA RETENTION WAVEFORM (CE Controlled)
tSDR
Data Retention Mode
tRDR
VDD
2.3V
2.0V
VDR
CE
GND
CE ≥ VDD Ð 0.2V
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
9
Rev. B
08/07/02