IS62LV12816BLL Datasheet, PDF (9/10 Pages) Integrated Silicon Solution, Inc – 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS62LV12816BLL
WRITE CYCLE NO. 4 (UB/LB Controlled)
t WC
ADDRESS
ADDRESS 1
t WC
ADDRESS 2
ISSI ^®
1
OE
2
t SA
CE _LOW
t HA
t HA
3
WE
t SA
UB, LB
t PBW
WORD 1
t PBW
WORD 2
4
t HZWE
t LZWE
DOUT DATA UNDEFINED
HIGH-Z
5
t HD
t HD
t SD
t SD
DIN
DATAIN
VALID
DATAIN
VALID
6
UB_CSWR4.eps
DATA RETENTION SWITCHING CHARACTERISTICS
7
Symbol Parameter
Test Condition
Min. Max. Unit
VDR
Vcc for Data Retention
See Data Retention Waveform
IDR
Data Retention Current
Vcc = 2.0V, CE • Vcc – 0.2V
1.5 3.45
V
—5
µA
8
tSDR
Data Retention Setup Time See Data Retention Waveform
0—
ns
tRDR
Recovery Time
See Data Retention Waveform
tRC —
ns
9
DATA RETENTION WAVEFORM (CE Controlled)
tSDR
Data Retention Mode
tRDR
VCC
2.3V
2.0V
VDR
CE
GND
CE ≥ VCC Ð 0.2V
10
11
12
Integrated Silicon Solution, Inc. — 1-800-379-4774
9
Rev. B
03/07/01