IS62LV12816BLL Datasheet, PDF (3/10 Pages) Integrated Silicon Solution, Inc – 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS62LV12816BLL
ISSI ^®
OPERATING RANGE
Range
Ambient Temperature
VCC
Commercial
0°C to +70°C
2.7V - 3.45V
1
Industrial
–40°C to +85°C
2.7V - 3.45V
2
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol
VTERM
Parameter
Terminal Voltage with Respect to GND
Value
–0.5 to Vcc+0.5
Unit
V
3
TBIAS
Temperature Under Bias
–40 to +85
°C
VCC
TSTG
Vcc Related to GND
Storage Temperature
–0.3 to +3.6
V
–65 to +150
°C
4
PT
Power Dissipation
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
5
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
6
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
VOH
Output HIGH Voltage
VCC = Min., IOH = –1 mA
VOL
Output LOW Voltage
VCC = Min., IOL = 2.1 mA
VIH
Input HIGH Voltage
VIL(1)
Input LOW Voltage
ILI
Input Leakage
GND ≤ VIN ≤ VCC
ILO
Output Leakage
GND ≤ VOUT ≤ VCC, Outputs Disabled
Notes:
1. VIL (min.) = –2.0V for pulse width less than 10 ns.
Min.
Max.
7 _Unit
2.0
—
V
—
0.4
2.2 VCC + 0.2
V
V
8
–0.2
0.4
V
–1
–1
1
1
9 ^µA
µA
10
CAPACITANCE⁽¹⁾
Symbol Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
6
pF
COUT
Input/Output Capacitance
VOUT = 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
03/07/01
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