IS62C256AL Datasheet, PDF (9/12 Pages) Integrated Silicon Solution, Inc – 32K x 8 LOW POWER CMOS STATIC RAM

IS65C256AL
IS62C256AL
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter
VDR VDD for Data Retention
IDR Data Retention Current
Test Condition
See Data Retention Waveform
VDD = 2.0V, CE ≥ VDD – 0.2V
VIN ≥ VDD – 0.2V, or VIN ≤ VSS + 0.2V
tSDR Data Retention Setup Time See Data Retention Waveform
tRDR Recovery Time
See Data Retention Waveform
Note:
1. Typical Values are measured at VDD = 5V, TA = 25^oC and not 100% tested.
Com.
Ind.
Auto.
DATA RETENTION WAVEFORM (CE Controlled)
VDD
4.5V
t_SDR
Data Retention Mode
2.2V
V_DR
CE
GND
CE ≥ VDD - 0.2V
ISSI ^®
Min. Typ. Max. Unit
2.0
5.5 V
——
——
——
15 µA
20
50
0
— ns
tRC
— ns
t_RDR
Integrated Silicon Solution, Inc. — 1-800-379-4774
9
Rev. A
03/17/06