IS62C256AL Datasheet, PDF (4/12 Pages) Integrated Silicon Solution, Inc – 32K x 8 LOW POWER CMOS STATIC RAM

IS65C256AL
IS62C256AL
ISSI ^®
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol
ICC1
ICC2
Parameter
VDD Operating
Supply Current
VDD Dynamic Operating
Supply Current
-25 ns
-45 ns
Test Conditions
Min. Max.
Min. Max.
Unit
VDD = Max., CE = VIL
Com.
— 15
— 15
mA
IOUT = 0 mA, f = 0
Ind.
— 20
— 20
Auto.
— 25
— 25
VDD = Max., CE = VIL
Com.
— 25
— 20
mA
IOUT = 0 mA, f = fMAX
Ind.
— 30
— 25
Auto.
— 35
— 30
typ. ⁽²⁾
15
12
ISB1
TTL Standby Current
(TTL Inputs)
VDD = Max.,
VIN = VIH or VIL
CE ≥ VIH, f = 0
Com.
Ind.
Auto.
— 100
— 120
— 150
— 100
µA
— 120
— 150
ISB2
CMOS Standby
VDD = Max.,
Com.
— 15
— 15
µA
Current (CMOS Inputs)
CE ≥ VDD – 0.2V,
Ind.
— 20
— 20
VIN ≥ VDD – 0.2V, or
Auto.
— 50
— 50
VIN ≤ 0.2V, f = 0
typ. ⁽²⁾
5
5
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 5.0V, TA = 25^oC and not 100% tested.
CAPACITANCE^(1,2)
Symbol
CIN
COUT
Parameter
Input Capacitance
Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
Unit
8
pF
10
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 5.0V.
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/17/06