IS61WV102416ALL Datasheet, PDF (8/21 Pages) Integrated Silicon Solution, Inc – 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
ISSI ^®
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
-8
Min. Max.
ICC
VDD Dynamic Operating VDD = Max.,
Com. — 120
Supply Current
IOUT = 0 mA, f = fMAX
Ind. — 125
VIN = 0.4V or VDD –0.3V Auto. — —
typ.⁽²⁾
ICC1
Operating
Supply Current
VDD = Max.,
Com. — 35
IOUT = 0 mA, f = 0
Ind. — 35
VIN = 0.4V or VDD –0.3V Auto. — —
ISB1
TTL Standby Current VDD = Max.,
(TTL Inputs)
VIN = VIH or VIL
CE ≥ VIH, f = 0
Com. — 30
Ind. — 35
Auto. — —
ISB2
CMOS Standby
VDD = Max.,
Com. — 20
Current (CMOS Inputs) CE ≥ VDD – 0.2V,
Ind. — 25
VIN ≥ VDD – 0.2V, or
Auto. — —
VIN ≤ 0.2V, f = 0
typ.⁽²⁾
-10
Min. Max.
— 95
— 100
— 140
60
— 30
— 40
— 70
— 30
— 35
— 70
— 20
— 25
— 70
4
-20
Min. Max. Unit
— 90 mA
— 100
— 140
— 30 mA
— 40
— 70
— 30 mA
— 35
— 70
— 20 mA
— 25
— 70
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.0V, TA = 25^oC and not 100% tested.
8
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
02/13/06