IS61WV102416ALL Datasheet, PDF (17/21 Pages) Integrated Silicon Solution, Inc – 1M x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter
Test Condition
VDR
VDD for Data Retention
See Data Retention Waveform
IDR
Data Retention Current
VDD = 1.2V, CE ≥ VDD – 0.2V
Ind.
Auto.
tSDR
Data Retention Setup Time See Data Retention Waveform
tRDR
Recovery Time
See Data Retention Waveform
DATA RETENTION WAVEFORM (CE Controlled)
VDD
1.65V
1.4V
VDR
CE
GND
tSDR
Data Retention Mode
CE ≥ VDD - 0.2V
ISSI ^®
Min. Max. Unit
1.2 3.6 V
—
20 mA
—
50
0
— ns
tRC
— ns
tRDR
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
17
Rev. A
02/13/06