IS61LV12816 Datasheet, PDF (8/12 Pages) Integrated Circuit Solution Inc – 128K x 16 HIGH-SPEED CMOS STATIC RAM

IS61LV12816
ISSI ^®
WRITE CYCLE SWITCHING CHARACTERISTICS^(1,3) (Over Operating Range)
Symbol Parameter
-10 ns
Min. Max.
-12 ns
-15 ns
Min. Max. Min. Max. Unit
tWC Write Cycle Time
10 —
12 —
15 —
ns
tSCE CE to Write End
8—
8—
10 —
ns
tAW Address Setup Time
to Write End
8—
8—
10 —
ns
tHA Address Hold from Write End
0—
0—
0—
ns
tSA Address Setup Time
0—
0—
0—
ns
tPWB LB, UB Valid to End of Write
8—
9—
10 —
ns
tPWE1 WE Pulse Width (OE = HIGH)
7
—
8—
10 —
ns
tPWE2 WE Pulse Width (OE = LOW)
8—
10 —
11 —
ns
tSD Data Setup to Write End
5—
6—
7—
ns
tHD Data Hold from Write End
0—
0—
0—
ns
tHZWE⁽³⁾ WE LOW to High-Z Output
—4
—5
—6
ns
tLZWE⁽³⁾ WE HIGH to Low-Z Output
0—
0—
0—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse
levels of 0V to 3.0V and output loading specified in Figure 1.
2. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must
be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup
and Hold timing are referenced to the rising or falling edge of the signal that terminates the write.
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100%
tested.
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
02/05/2003