IS61LV12816 Datasheet, PDF (3/12 Pages) Integrated Circuit Solution Inc – 128K x 16 HIGH-SPEED CMOS STATIC RAM

IS61LV12816
PIN DESCRIPTIONS
A0-A16
I/O0-I/O15
CE
OE
WE
LB
UB
NC
VDD
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
ISSI ^®
OPERATING RANGE
Range
Ambient Temperature
Commercial
0°C to + 70°C
Industrial
–40°C to + 85°C
VDD
3.3V ± 10%
3.3V ± 10%
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
Value
Unit
VDD
Power Supply Voltage Relative to GND
–0.3 to 4.0
V
VTERM
Terminal Voltage with Respect to GND
–0.5 to VDD + 0.5
V
TSTG
Storage Temperature
–65 to + 150
°C
PT
Power Dissipation
1.0
W
IOUT
DC Output Current
±20
mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliabil-
ity.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
VOH
Output HIGH Voltage
VDD = Min., IOH = –4.0 mA
VOL
Output LOW Voltage
VDD = Min., IOL = 8.0 mA
VIH
Input HIGH Voltage⁽¹⁾
VIL
Input LOW Voltage⁽¹⁾
ILI
Input Leakage
GND ≤ VIN ≤ VDD
ILO
Output Leakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
Note:
1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns).
VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns).
Min.
Max.
Unit
2.4
—
V
—
0.4
V
2
VDD + 0.3
V
–0.3
0.8
V
–1
1
µA
–1
1
µA
Integrated Silicon Solution, Inc. — 1-800-379-4774
3
Rev. C
02/05/2003