IS61WV25616ALL Datasheet, PDF (7/21 Pages) Integrated Silicon Solution, Inc – 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
HIGH SPEED (IS61WV25616ALL/BLL)
OPERATING RANGE (VDD) (IS61WV25616ALL)
Range
Ambient Temperature
VDD
Speed
1
Commercial
0°C to +70°C
1.65V-2.2V
20ns
Industrial
–40°C to +85°C
1.65V-2.2V
20ns
Automotive
–40°C to +125°C
1.65V-2.2V
20ns
2
OPERATING RANGE (VDD) (IS61WV25616BLL)⁽¹⁾
Range
Ambient Temperature
VDD (8 nS)¹
VDD (10 nS)¹
3
Commercial
0°C to +70°C
3.3V + 5%
2.4V-3.6V
Industrial
–40°C to +85°C
3.3V + 5%
2.4V-3.6V
Note:
1. When operated in the range of 2.4V-3.6V, the device meets 10ns. When operated in the
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range of 3.3V + 5%, the device meets 8ns.
5
OPERATING RANGE (VDD) (IS64WV25616BLL)
Range
Ambient Temperature
VDD (10 nS)
Automotive
–40°C to +125°C
2.4V-3.6V
6
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
ICC
VDD Dynamic Operating VDD = Max.,
Supply Current
IOUT = 0 mA, f = fMAX
ICC1
ISB1
ISB2
Operating
Supply Current
VDD = Max.,
IOUT = 0 mA, f = 0
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
VDD = Max.,
VIN = VIH or VIL
CE ≥ VIH, f = 0
VDD = Max.,
CE ≥ VDD – 0.2V,
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Com.
Ind.
Auto.
typ.⁽²⁾
Com.
Ind.
Auto.
Com.
Ind.
Auto.
Com.
Ind.
Auto.
typ.⁽²⁾
-8
Min. Max.
— 50
— 55
——
— 35
— 40
——
— 10
— 15
——
—8
—9
——
-10
Min. Max.
— 40
— 45
— 65
25
— 35
— 40
— 60
— 10
— 15
— 30
—8
—9
— 20
2
7
-20
Min. Max. Unit
— 35 mA
8
— 40
— 60
— 30 mA
9
— 40
— 60
— 10
mA
— 15
10
— 30
—8
mA
—9
— 20
11
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.0V, TA = 25^oC and not 100% tested.
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Integrated Silicon Solution, Inc. — www.issi.com
7
Rev. G
07/15/2010