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IS61WV25616ALL Datasheet, PDF (17/21 Pages) Integrated Silicon Solution, Inc – 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM | |||
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IS61WV25616ALL/ALS, IS61WV25616BLL/BLS,
IS64WV25616BLL/BLS
LOW POWER (IS61WV25616ALS/BLS)
DATA RETENTION SWITCHING CHARACTERISTICS (2.4V-3.6V)
1
Symbol Parameter
Test Condition
Options
Min.
Typ.(1) Max. Unit
VDR
VDD for Data Retention
See Data Retention Waveform
IDR
Data Retention Current
VDD = 2.0V, CE ⥠VDD â 0.2V
Com.
Ind.
Auto.
2.0
â
3.6 V
â
0.2
1 mA
2
â
â
2
10
tSDR
Data Retention Setup Time See Data Retention Waveform
tRDR
Recovery Time
See Data Retention Waveform
0
tRC
â
â ns
â
â ns
3
Note 1: Typical values are measured at VDD = 3.0V, TA = 25OC and not 100% tested.
4
DATA RETENTION SWITCHING CHARACTERISTICS (1.65V-2.2V)
Symbol Parameter
Test Condition
Options
Min.
Typ.(1) Max. Unit
VDR
VDD for Data Retention
See Data Retention Waveform
1.2
â
3.6 V
5
IDR
Data Retention Current
VDD = 1.2V, CE ⥠VDD â 0.2V
Com.
â
0.2
1 mA
Ind.
tSDR
Data Retention Setup Time See Data Retention Waveform
â
â
2
0
â
â ns
6
tRDR
Recovery Time
See Data Retention Waveform
tRC
â
â ns
: Typical values are measured at VDD = 1.8V, TA = 25OC and not 100% tested.
7
DATA RETENTION WAVEFORM (CE Controlled)
8
VDD
VDR
CE
GND
tSDR
Data Retention Mode
tRDR
CE ⥠VDD - 0.2V
9
10
11
12
Integrated Silicon Solution, Inc. â www.issi.com
17
Rev. G
07/15/2010
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