IS66WV51216DALL Datasheet, PDF (6/17 Pages) Integrated Silicon Solution, Inc – 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM

IS66WV51216DALL
IS66/67WV51216DBLL
1.7V-1.95V POWER SUPPLY CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions

Icc
Vdd Dynamic Operating Vdd = Max.,

Supply Current
Iout = 0 mA, f = fmax

All Inputs 0.4V
Com.
Ind.
Auto.

or Vdd – 0.2V
Icc1

Operating Supply
Current
Vdd = Max., CS1 = 0.2V Com.
WE = Vdd – 0.2V
Ind.

CS2 = Vdd – 0.2V, f = 1mhz Auto.
Isb1 TTL Standby Current

(TTL Inputs)


Vdd = Max.,
Vin = Vih or Vil
CS1 = Vih , CS2 = Vil,
f = 1 MHz
Com.
Ind.
Auto.
Max.
Unit
70ns
20
mA
25
30
4
mA
4
10
0.6
mA
0.6
1

OR

ULB Control

Vdd = Max., Vin = Vih or Vil
CS1 = Vil, f = 0, UB = Vih, LB = Vih
Isb2
CMOS Standby
Vdd = Max.,
Com. 100
µA

Current (CMOS Inputs) CS1 ≥ Vdd – 0.2V,
Ind. 120

CS2 ≤ 0.2V,
Auto. 150

Vin ≥ Vdd – 0.2V, or


Vin ≤ 0.2V, f = 0

OR

ULB Control


Vdd = Max., CS1 = Vil, CS2=Vih
Vin ≥ Vdd – 0.2V, or Vin ≤ 0.2V, f = 0;
UB / LB = Vdd – 0.2V
Note:.
1. At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
6
Integrated Silicon Solution, Inc. — www.issi.com
Rev.  A
06/28/2011