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IS65WV25616ALL Datasheet, PDF (6/13 Pages) Integrated Silicon Solution, Inc – 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM | |||
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IS65WV25616ALL, IS65WV25616BLL
ISSI ®
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
Symbol
Parameter
55 ns
Min. Max.
70 ns
Min. Max.
Unit
tRC
Read Cycle Time
55
â
70
â
ns
tAA
Address Access Time
â
55
â
70
ns
tOHA
Output Hold Time
10
â
10
â
ns
tACS1
CS1 Access Time
â
55
â
70
ns
tDOE
OE Access Time
â
25
â
35
ns
tHZOE(2)
OE to High-Z Output
â
20
â
25
ns
tLZOE(2)
OE to Low-Z Output
5
â
5
â
ns
tHZCS1
CS1 to High-Z Output
0
20
0
25
ns
tLZCS1
CS1 to Low-Z Output
10
â
10
â
ns
tBA
LB, UB Access Time
â
55
â
70
ns
tHZB
LB, UB to High-Z Output
0
20
0
25
ns
tLZB
LB, UB to Low-Z Output
0
â
0
â
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V, input pulse levels of 0.4 to 1.4V
and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
6
Integrated Silicon Solution, Inc. â www.issi.com â 1-800-379-4774
Rev. 00B
06/20/06
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