IS65WV25616ALL Datasheet, PDF (11/13 Pages) Integrated Silicon Solution, Inc – 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

IS65WV25616ALL, IS65WV25616BLL
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter
Test Condition
VDR
VDD for Data Retention
See Data Retention Waveform
IDR
Data Retention Current
VDD = 1.2V, CS1 ≥ VDD – 0.2V
A1
A2
A3
tSDR
Data Retention Setup Time See Data Retention Waveform
tRDR
Recovery Time
See Data Retention Waveform
DATA RETENTION WAVEFORM (CS1 Controlled)
VDD
1.65V
1.4V
VDR
CS1
GND
tSDR
Data Retention Mode
CS1 ≥ VDD - 0.2V
ISSI ^®
Min. Max. Unit
1.2 3.6
V
—
20
µA
—
40
µA
—
60
µA
0
—
ns
tRC
—
ns
tRDR
51216LT_DR.eps
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
11
Rev. 00B
06/20/06