IS65WV25616ALL Datasheet, PDF (3/13 Pages) Integrated Silicon Solution, Inc – 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

IS65WV25616ALL, IS65WV25616BLL
ISSI ^®
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol
Parameter
Value
Unit
VTERM
Terminal Voltage with Respect to GND
–0.2 to VDD+0.3
V
VDD
VDD Related to GND
–0.2 to VDD+0.3
V
TSTG
Storage Temperature
–65 to +150
°C
PT
Power Dissipation
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
OPERATING RANGE (VDD)
Range
A1
A2
A3
Ambient Temperature
-40°C to +85°C
–40°C to +105°C
–40°C to +125°C
IS65WV25616ALL
1.65V - 2.2V
1.65V - 2.2V
1.65V - 2.2V
IS65WV25616BLL
2.5V-3.6V
2.5V-3.6V
2.5V-3.6V
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
VDD
VOH
Output HIGH Voltage IOH = -0.1 mA
IOH = -1 mA
1.65-2.2V
2.5-3.6V
VOL
Output LOW Voltage IOL = 0.1 mA
IOL = 2.1 mA
1.65-2.2V
2.5-3.6V
VIH
Input HIGH Voltage
1.65-2.2V
2.5-3.6V
VIL(1)
Input LOW Voltage
1.65-2.2V
2.5-3.6V
ILI
Input Leakage
GND ≤ VIN ≤ VDD
ILO
Output Leakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
Notes:
1. VIL (min.) = –1.0V for pulse width less than 10 ns.
Min.
1.4
2.2
—
—
1.4
2.2
–0.2
–0.2
–2
–2
Max.
Unit
—
V
—
V
0.2
V
0.4
V
VDD + 0.2
V
VDD + 0.3
V
0.4
V
0.6
V
2
µA
2
µA
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
3
Rev. 00B
06/20/06