IS62WV10248BLL Datasheet, PDF (6/12 Pages) Integrated Silicon Solution, Inc – 1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS62WV10248BLL
ISSI ^®
READ CYCLE SWITCHING CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol
Parameter
55 ns
70 ns
Min. Max.
Min. Max.
Unit
tRC
Read Cycle Time
55
—
70
—
ns
tAA
Address Access Time
—
55
—
70
ns
tOHA
Output Hold Time
10
—
10
—
ns
tACS1/tACS2
CS1/CS2 Access Time
—
55
—
70
ns
tDOE
OE Access Time
—
25
—
35
ns
tHZOE⁽²⁾
OE to High-Z Output
—
20
—
25
ns
tLZOE⁽²⁾
OE to Low-Z Output
5
—
5
—
ns
t t HZCS1/ HZCS2⁽²⁾ CS1/CS2 to High-Z Output
0
20
0
25
ns
t t LZCS1/ LZCS2⁽²⁾ CS1/CS2 to Low-Z Output
10
—
10
—
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse
levels of 0.4V to VDD-0.3V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
AC WAVEFORMS
READ CYCLE NO. 1^(1,2) (Address Controlled) (CS1 = OE = VIL, CS2 = WE = VIH)
ADDRESS
DOUT
tRC
tAA
tOHA
PREVIOUS DATA VALID
tOHA
DATA VALID
6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
03/17/06