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IS62WV10248BLL Datasheet, PDF (4/12 Pages) Integrated Silicon Solution, Inc – 1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV10248BLL
CAPACITANCE(1)
Symbol Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
8
pF
COUT
Input/Output Capacitance
VOUT = 0V
10
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
IS62WV10248BLL
(Unit)
0.4 to VDD-0.3V
5 ns
VREF
See Figures 1 and 2
ISSI ®
R1(Ω)
R2(Ω)
VREF
VTM
IS62WV10248BLL
2.5V - 3.6V
1029
1728
1.5V
2.8V
AC TEST LOADS
R1
VTM
OUTPUT
30 pF
R2
Including
jig and
scope
Figure 1
R1
VTM
OUTPUT
5 pF
R2
Including
jig and
scope
Figure 2
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
03/17/06