IS62WV10248BLL Datasheet, PDF (5/12 Pages) Integrated Silicon Solution, Inc – 1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IS62WV10248BLL
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
IS62WV10248BLL
Symbol Parameter
Test Conditions
ICC
VDDDynamicOperating VDD=Max.,
Com.
Supply Current
ICC1
Operating Supply
Current
IOUT = 0 mA, f = fMAX
VDD = Max., CS1 = 0.2V
WE = VDD -0.2V
Ind.
Com.
Ind.
CS2 = VDD -0.2V, f = 1MHz
ISB1
TTL Standby Current
VDD = Max.,
Com.
(TTL Inputs)
VIN = VIH or VIL
Ind.
CS1 = VIH , CS2 = VIL,
f = 1 MHZ
Max. Max.
55
70
30
25
35
30
5
5
5
5
0.3
0.3
0.3
0.3
ISB2
CMOS Standby
VDD = Max.,
Current(CMOSInputs) CS1≥ VDD–0.2V,
CS2 ≤ 0.2V,
VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0
Com.
Ind.
typ.⁽¹⁾
20
20
25
25
3
3
Note:
1. Typical Values are measured at VDD = 3.0V, TA = 25^oC and not 100% tested.
ISSI ^®
Unit
mA
mA
mA
µA
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
5
Rev. C
03/17/06