IS61LV25616AL-10TL Datasheet, PDF (6/16 Pages) Integrated Silicon Solution, Inc – 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS61LV25616AL
READ CYCLE SWITCHING CHARACTERISTICS⁽¹⁾ (Over Operating Range)

Symbol Parameter
trc
Read Cycle Time
taa
Address Access Time
toha
Output Hold Time
tace
CE Access Time
tdoe
OE Access Time
thzoe⁽²⁾ OE to High-Z Output
tlzoe⁽²⁾
OE to Low-Z Output
thzce⁽²
CE to High-Z Output
tlzce⁽²⁾
CE to Low-Z Output
tba
LB, UB Access Time
thzb⁽²⁾
LB, UB to High-Z Output
tlzb⁽²⁾
LB, UB to Low-Z Output
tpu
Power Up Time
tpd
Power Down Time
-10
Min. Max.
10 —
— 10
2—
— 10
—4
—4
0—
04
3—
—4
03
0—
0—
— 10
-12
Min. Max. Unit
12 —
ns
— 12
ns
2—
ns
— 12
ns
—5
ns
—5
ns
0—
ns
06
ns
3—
ns
—5
ns
04
ns
0—
ns
0—
ns
— 12
ns
Notes:
1.  Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of
0V to 3.0V and output loading specified in Figure 1.
2.  Tested with the load in Figure 2.Transition is measured ±500 mV from steady-state voltage.
AC TEST LOADS
3.3V
319 Ω
OUTPUT
30 pF
Including
jig and
scope
Figure 1
353 Ω
3.3V
319 Ω
OUTPUT
5 pF
Including
jig and
scope
Figure 2
353 Ω
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing and Reference Level
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
12/15/2011