IS61LV25616AL-10TL Datasheet, PDF (5/16 Pages) Integrated Silicon Solution, Inc – 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS61LV25616AL
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)

Symbol Parameter
Test Conditions
Icc
Vdd Dynamic Operating Vdd = Max.,
Com.
Supply Current
Iout = 0 mA, f = fmax Ind.
Isb
TTL Standby Current
(TTL Inputs)

Vdd = Max.,
Vin = Vih or Vil
CE ≥ Vih, f =fmax.
Com.
Ind.
Isb1
TTL Standby Current
(TTL Inputs)

Vdd = Max.,
Vin = Vih or Vil
CE ≥ Vih, f = 0
Com.
Ind.
Isb2
CMOS Standby
Current (CMOS Inputs)

Vdd = Max.,
CE ≥ Vdd – 0.2V,
Vin ≥ Vdd – 0.2V, or
Vin ≤ 0.2V, f = 0
Com.
Ind.
-10
-12
Min. Max. Min. Max. Unit
— 100
— 110
— 90 mA
— 100
— 50
— 45
mA
— 55
— 50
— 20
— 20
mA
— 25
— 25
— 15
— 15
mA
— 20
— 20
Note:
1. At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Shaded area product in development
CAPACITANCE⁽¹⁾
Symbol
Cin
Cout
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
Vin = 0V
Vout = 0V
Max.
Unit
6
pF
8
pF
Note:
1.  Tested initially and after any design or process changes that may affect these parameters.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
5
Rev. F
12/15/2011