IS61LV25616AL-10TL Datasheet, PDF (11/16 Pages) Integrated Silicon Solution, Inc – 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS61LV25616AL
DATA RETENTION SWITCHING CHARACTERISTICS  (LL)
Symbol
Vdr
Idr
Parameter
Vdd for Data Retention
Data Retention Current
Test Condition
See Data Retention Waveform
Vdd = 2.0V, CE ≥ Vdd – 0.2V
tsdr
Data Retention Setup Time See Data Retention Waveform
trdr
Recovery Time
See Data Retention Waveform
Note 1: Typical values are measured at Vdd = 3.0V, Ta = 25^oC and not 100% tested.
Options
Com.
Ind.
Min.
Typ.⁽¹⁾ Max. Unit
2.0
—
3.6 V
—
5
10 mA
—
—
15
0
—
— ns
trc
—
— ns
DATA RETENTION WAVEFORM (CE Controlled)
VDD
1.65V
1.4V
VDR
CE
GND
tSDR
Data Retention Mode
tRDR
CE ≥ VDD - 0.2V
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
11
Rev. F
12/15/2011