IS93C46D Datasheet, PDF (5/16 Pages) Integrated Silicon Solution, Inc – 1-KBIT SERIAL ELECTRICALLY ERASABLE PROM

IS93C46D
DC ELECTRICAL CHARACTERISTICS
TA = –40°C to +85°C for Industrial and –40°C to +125°C for Automotive.
Symbol Parameter
Test Conditions
Vcc
Min.
Max. Unit
VOL2
Output LOW Voltage IOL = 100 µA
1.8V to 2.7V
—
0.2
V
VOL1
Output LOW Voltage IOL = 2.1mA
2.7V to 5.5V
—
0.4
V
VOH2
Output HIGH Voltage IOH = –100 µA
1.8V to 2.7V VCC – 0.2
—
V
VOH1
Output HIGH Voltage IOH = –400 µA
2.7V to 5.5V
2.4
—
V
VIH
Input HIGH Voltage
1.8V to 2.7V
2.7V to 5.5V
0.7XVCC
2.0
VCC+1 V
VCC+1
VIL
Input LOW Voltage
1.8V to 2.7V
–0.3
0.2XVCC V
2.7V to 5.5V
–0.3
0.8
ILI
Input Leakage
VIN = 0V to VCC (CS, SK,DIN,ORG)
0
2.5
µA
ILO
Output Leakage
VOUT = 0V to VCC, CS = 0V
0
2.5
µA
Notes:
Automotive grade devices in this table are tested with Vcc = 2.5V to 5.5V and 4.5V to 5.5V. An operation with Vcc <2.5V is not specified.
POWER SUPPLY CHARACTERISTICS
TA = –40°C to +85°C for Industrial, –40°C to +125°C for Automotive.
Symbol
ICC1
ICC2
ISB1
ISB2
Parameter
Vcc Read Supply Current
Vcc Write Supply Current
Standby Current
Standby Current
Test Conditions
CS = VIH, SK = 1 MHz, CMOS input levels
CS = VIH, SK = 2 MHz, CMOS input levels
CS = VIH, SK = 2 MHz, CMOS input levels
CS = VIH, SK = 1 MHz, CMOS input levels
CS = VIH, SK = 2 MHz, CMOS input levels
CS = VIH, SK = 2 MHz, CMOS input levels
CS = GND, SK = GND
ORG = Vcc or Floating (x16)
DIN = Vcc or GND
CS = GND, SK = GND
ORG = GND (x8)
DIN = Vcc or GND
Vcc Min. Typ. Max. Unit
1.8V — 0.1 1 mA
2.5V — 0.2 1 mA
5.0V — 0.5 2 mA
1.8V — 0.5 1 mA
2.5V — 1 2 mA
5.0V — 2 3 mA
1.8V — 0.1 1 µA
2.5V — 0.1 2 µA
5.0V — 0.2 4 µA
1.8V — 6 10 µA
2.5V — 6 10 µA
5.0V — 10 15 µA
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
5
Rev. 00G
01/15/07