IS64LV6416L Datasheet, PDF (5/14 Pages) Integrated Silicon Solution, Inc – 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

IS64LV6416L
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1a and 1b
ISSI ^®
1
2
AC TEST LOADS
3
3.3V
319 Ω
3.3V
319 Ω
4
OUTPUT
30 pF
Including
jig and
scope
Figure 1a.
353 Ω
OUTPUT
5 pF
Including
jig and
scope
Figure 1b.
353 Ω
READ CYCLE SWITCHING CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol
Parameter
-10 ns
-12 ns
Min. Max.
Min. Max.
Unit
tRC
Read Cycle Time
10 —
12 —
ns
tAA
Address Access Time
— 10
— 12
ns
tOHA
Output Hold Time
3—
3—
ns
tACE
CE Access Time
— 10
— 12
ns
tDOE
OE Access Time
—5
—6
ns
tHZOE⁽²⁾
OE to High-Z Output
—5
—6
ns
tLZOE⁽²⁾
OE to Low-Z Output
0—
0—
ns
tHZCE⁽²
CE to High-Z Output
05
06
ns
tLZCE⁽²⁾
CE to Low-Z Output
3—
3—
ns
tBA
LB, UB Access Time
—6
—6
ns
tHZB
LB, UB to High-Z Output
05
06
ns
tLZB
LB, UB to Low-Z Output
0—
0—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
5
Rev. C
05/02/03