IS64LV6416L Datasheet, PDF (4/14 Pages) Integrated Silicon Solution, Inc – 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

IS64LV6416L
ISSI ^®
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
-10 ns
-12 ns
Min. Max.
Min. Max.
Unit
ICC
VDD Dynamic Operating VDD = Max.,
A1
— 95
——
mA
Supply Current
IOUT = 0 mA, f = fMAX
A2
——
— 105
A3
——
— 115
ISB1
TTL Standby Current VDD = Max.,
(TTL Inputs)
VIN = VIH or VIL
CE ≥ VIH , f = 0
A1
— 15
——
mA
A2
——
— 18
A3
——
— 20
ISB2
CMOS Standby
VDD = Max.,
A1
—2
——
mA
Current (CMOS Inputs) CE ≥ VDD – 0.2V,
A2
——
—3
VIN ≥ VDD – 0.2V, or
A3
——
—5
VIN ≤ 0.2V, f = 0
typ⁽²⁾
— 0.5
— 0.5
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at VDD = 3.3V, TA = 25^oC and not 100% tested.
CAPACITANCE⁽¹⁾
Symbol
CIN
COUT
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
Unit
6
pF
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. C
05/02/03