IS64LV6416L Datasheet, PDF (11/14 Pages) Integrated Silicon Solution, Inc – 64K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

IS64LV6416L
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter
Test Condition
Options
VDR
VDD for Data Retention
See Data Retention Waveform
IDR
Data Retention Current
VDD = 2.0V, CE ≥ VDD – 0.2V
A1
A2
A3
tSDR
Data Retention Setup Time See Data Retention Waveform
tRDR
Recovery Time
See Data Retention Waveform
Note 1: Typical values are measured at VDD = 3.0V, TA = 25^OC and not 100% tested.
ISSI ^®
Min.
Typ.⁽¹⁾ Max. Unit
2.0
—
3.6 V
1
—
0.5
2 mA
—
—
3
—
—
5
2
0
—
— ns
tRC
—
— ns
3
4
DATA RETENTION WAVEFORM (CE Controlled)
5
tSDR
Data Retention Mode
tRDR
VDD
6
VDR
7
CE ≥ VDD - 0.2V
CE
GND
8
9
10
11
12
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
11
Rev. C
05/02/03