IS62U6416LL Datasheet, PDF (5/9 Pages) Integrated Silicon Solution, Inc – 64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM

IS62U6416LL
ISSI ^®
CAPACITANCE⁽¹⁾
1
Symbol Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
8
pF
COUT
Input/Output Capacitance
VOUT = 0V
10
pF
2
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
3
4
READ CYCLE SWITCHING CHARACTERISTICS⁽¹⁾
(Over Operating Range)
5
-200
Symbol Parameter
Min. Max. Unit
tRC
Read Cycle Time
200 —
ns
tAA
Address Access Time
— 200
ns
6
tOHA
Output Hold Time
20 —
ns
tACE
CE Access Time
tDOE
OE Access Time
— 200
ns
— 100
ns
7
tHZOE⁽²⁾ OE to High-Z Output
0 50
ns
tLZOE⁽²⁾
tHZCE⁽²⁾
OE to Low-Z Output
CE to High-Z Output
20 —
ns
0 50
ns
8
tLZCE⁽²⁾ CE to Low-Z Output
30 —
ns
tBA
LB, UB Access Time
— 100
ns
tHZB
LB, UB to High-Z Output 0 50
ns
9
tLZB
LB, UB to Low-Z Output 20 —
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing
reference levels of 0.9V, input pulse levels of 0.4 to 1.8V and output
loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500mV from
steady-state voltage. Not 100% tested.
10
11
12
Integrated Silicon Solution, Inc. — 1-800-379-4774
5
ADVANCE INFORMATION SR034-0C
12/09/98