IS62U6416LL Datasheet, PDF (1/9 Pages) Integrated Silicon Solution, Inc – 64K x 16 LOW VOLTAGE, ULTRA-LOW POWER CMOS STATIC RAM

IS62U6416LL
IS62U6416LL
ISSI^ISSI®®
64K x 16 LOW VOLTAGE,
ULTRA-LOW POWER CMOS STATIC RAM
FEATURES
DESCRIPTION
ADVANCE INFORMATION
DECEMBER 1998
1
• Access time: 200 ns
• CMOS low power operation
– 40 mW (typical) operating
– 90 µW (typical) standby
• TTL compatible interface levels
• Single 1.8V-2.7V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in Jedec Std 44-pin SOJ package,
44-pin TSOP (Type II), and 48-pin mini BGA
FUNCTIONAL BLOCK DIAGRAM
2 ^{The ISSI IS62U6416LL is an ultra-low power, 1,048,576-bit}
static RAM organized as 65,536 words by 16 bits. It is
fabricated using ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit
design techniques yields access times as fast as 200 ns with
low power consumption.
3
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down
4 ^{with CMOS input levels.}
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
5 ^{A data byte allows Upper Byte (UB) and Lower Byte (LB)}
access.
6
7
A0-A15
DECODER
64K x 16
MEMORY ARRAY
8
VCC
GND
9
I/O0-I/O7
Lower Byte
I/O
DATA
COLUMN I/O
10
I/O8-I/O15
CIRCUIT
Upper Byte
11
CE
OE
WE
CONTROL
CIRCUIT
12
UB
LB
The specification contains ADVANCE INFORMATION. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible
product. We assume no responsibility for any errors which may appear in this publication. © Copyright 1998, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
ADVANCE INFORMATION SR034-0C
12/09/98