IS62C1024 Datasheet, PDF (5/8 Pages) Integrated Circuit Solution Inc – 128K x 8 HIGH-SPEED CMOS STATIC RAM

IS62C1024
ISSI ^®
READ CYCLE SWITCHING CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
-35
-45
-55
-70
Min. Max.
Min. Max.
Min. Max.
Min. Max.
Unit
tRC
Read Cycle Time
35 —
45 —
55 —
70 —
ns
tAA
Address Access Time
— 35
— 45
— 55
— 70
ns
tOHA
Output Hold Time
3
—
3
—
3
—
3—
ns
tACE1
CE1 Access Time
— 35
— 45
— 55
— 70
ns
tACE2
CE2 Access Time
— 35
— 45
— 55
— 70
ns
tDOE
OE Access Time
— 10
— 20
— 25
— 35
ns
tLZOE⁽²⁾
OE to Low-Z Output
0
—
0
—
0
—
0—
ns
tHZOE⁽²⁾
OE to High-Z Output
0 10
0 15
0
20
0 25
ns
tLZCE1⁽²⁾ CE1 to Low-Z Output
3
—
5
—
7
—
10 —
ns
tLZCE2⁽²⁾ CE2 to Low-Z Output
3
—
5
—
7
—
10 —
ns
tHZCE⁽²⁾
CE1 or CE2 to High-Z Output
0 10
0 15
0
20
0 25
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
AC WAVEFORMS
READ CYCLE NO. 1^(1,2)
ADDRESS
DOUT
tRC
tAA
tOHA
tOHA
DATA VALID
Integrated Silicon Solution, Inc. — 1-800-379-4774
5
Rev. G
01/14/00