IS62C1024 Datasheet, PDF (1/8 Pages) Integrated Circuit Solution Inc – 128K x 8 HIGH-SPEED CMOS STATIC RAM

IS62C1024
128K x 8 HIGH-SPEED CMOS STATIC RAM
ISSI^®
JANUARY 2000
FEATURES
• High-speed access time: 35, 45, 55, 70 ns
• Low active power: 450 mW (typical)
• Low standby power: 500 µW (typical) CMOS
standby
• Output Enable (OE) and two Chip Enable
(CE1 and CE2) inputs for ease in applications
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 5V (±10%) power supply
DESCRIPTION
The ISSI IS62C1024 is a low power,131,072-word by
8-bit CMOS static RAM. It is fabricated using ISSI's
high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design techniques,
yields higher performance and low power consumption
devices.
When CE1 is HIGH or CE2 is LOW (deselected), the
device assumes a standby mode at which the power
dissipation can be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip
Enable inputs, CE1 and CE2. The active LOW Write
Enable (WE) controls both writing and reading of the
memory.
The IS62C1024 is available in 32-pin 525-mil plastic SOP
and TSOP (type 1) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
VCC
GND
I/O0-I/O7
DECODER
512 X 2048
MEMORY ARRAY
I/O
DATA
CIRCUIT
COLUMN I/O
CE1
CE2
OE
WE
CONTROL
CIRCUIT
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. G
01/14/00