IS61LV25616_01 Datasheet, PDF (5/11 Pages) Integrated Silicon Solution, Inc – 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS61LV25616
ISSI ^®
READ CYCLE SWITCHING CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol
tRC
tAA
tOHA
tACE
tDOE
tHZOE⁽²⁾
tLZOE⁽²⁾
tHZCE⁽²
tLZCE⁽²⁾
tBA
tHZB⁽²⁾
tLZB⁽²⁾
tPU
tPD
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE Access Time
OE Access Time
OE to High-Z Output
OE to Low-Z Output
CE to High-Z Output
CE to Low-Z Output
LB, UB Access Time
LB, UB to High-Z Output
LB, UB to Low-Z Output
Power Up Time
Power Down Time
-10
-12
-15
Min. Max. Min. Max. Min. Max. Unit
10 —
12 —
15 —
ns
— 10
— 12
— 15
ns
3—
3—
3—
ns
— 10
— 12
— 15
ns
—4
—5
—7
ns
—4
—5
06
ns
0—
0—
0—
ns
04
06
08
ns
3—
3—
3—
ns
—4
—5
—7
ns
03
04
05
ns
0—
0—
0—
ns
0—
0—
0—
ns
— 10
— 12
— 15
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V,
input pulse levels of 0V to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
OUTPUT
ZO = 50Ω
50Ω
1.5V
30 pF
Including
jig and
scope
Figure 1
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01
3.3V
319 Ω
OUTPUT
Figure 2
5 pF
Including
jig and
scope
353 Ω
1
2
3
4
5
6
7
8
9
10
11
12
5