IS61LV25616_01 Datasheet, PDF (3/11 Pages) Integrated Silicon Solution, Inc – 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS61LV25616
TRUTH TABLE
Mode
Not Selected
Output Disabled
Read
Write
WE CE OE LB UB
X
H
X
X
X
H
L
H
X
X
X
L
X
H
H
H
L
L
L
H
H
L
L
H
L
H
L
L
L
L
L
L
X
L
H
L
L
X
H
L
L
L
X
L
L
ISSI ^®
I/O PIN
I/O0-I/O7
I/O8-I/O15
Vcc Current
1
High-Z
High-Z
ISB1, ISB2
High-Z
High-Z
High-Z
High-Z
ICC
2
DOUT
High-Z
DOUT
DIN
High-Z
DIN
High-Z
DOUT
DOUT
High-Z
DIN
DIN
ICC
3
ICC
4
5
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
Value
Unit
6
VTERM Terminal Voltage with Respect to GND –0.5 to Vcc+0.5 V
TBIAS Temperature Under Bias
–45 to +90
°C
VCC Vcc Related to GND
–0.3 to +4.0
V
7
TSTG Storage Temperature
–65 to +150
°C
PT
Power Dissipation
1.0
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
8
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
9
10
OPERATING RANGE
Range
Ambient Temperature
10 ns
VCC
11
12 ns, 15 ns
VCC
Commercial
0°C to +70°C
3.3V +10%, -5%
3.3V ± 10%
12
Industrial
–40°C to +85°C
3.3V +10%, -5%
3.3V ± 10%
Integrated Silicon Solution, Inc. — 1-800-379-4774
3
Rev. C
11/01/01