IS61LV25616_01 Datasheet, PDF (4/11 Pages) Integrated Silicon Solution, Inc – 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY

IS61LV25616
ISSI ^®
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol
VOH
VOL
VIH
VIL
ILI
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage⁽¹⁾
Input Leakage
Test Conditions
VCC = Min., IOH = –4.0 mA
VCC = Min., IOL = 8.0 mA
GND ≤ VIN ≤ VCC
ILO
Output Leakage
GND ≤ VOUT ≤ VCC, 4
Outputs Disabled
Notes:
1. VIL (min.) = –2.0V for pulse width less than 10 ns.
Com.
Ind.
Com.
Ind.
Min.
2.4
—
2.0
–0.3
–1
–5
–1
–5
Max.
—
0.4
VCC + 0.3
0.8
1
5
1
5
Unit
V
V
V
V
µA
µA
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
ICC
Vcc Dynamic Operating
Supply Current
ISB
TTL Standby Current
(TTL Inputs)
ISB1
TTL Standby Current
(TTL Inputs)
ISB2
CMOS Standby
Current (CMOS Inputs)
Test Conditions
VCC = Max.,
Com.
IOUT = 0 mA, f = fMAX Ind.
VCC = Max.,
VIN = VIH or VIL
CE ≥ VIH, f = fMAX.
Com.
Ind.
VCC = Max.,
VIN = VIH or VIL
CE ≥ VIH, f = 0
Com.
Ind.
VCC = Max.,
CE ≥ VCC – 0.2V,
VIN ≥ VCC – 0.2V, or
VIN ≤ 0.2V, f = 0
Com.
Ind.
-10
-12
-15
Min. Max. Min. Max. Min. Max. Unit
— 260
— 300
— 240
— 280
— 220 mA
— 250
— 85
— 95
— 75
— 85
— 65 mA
— 75
— 20
— 25
— 20
— 25
— 20 mA
— 25
— 10
— 15
— 10
— 15
— 10 mA
— 15
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
CAPACITANCE⁽¹⁾
Symbol
CIN
COUT
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
Unit
6
pF
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
11/01/01