IS63WV1024BLL Datasheet, PDF (4/17 Pages) Integrated Silicon Solution, Inc – 128K x 8 HIGH-SPEED CMOS STATIC RAM

IS63WV1024BLL
IS64WV1024BLL
ISSI ^®
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 2.5V-3.6V
Symbol Parameter
Test Conditions
VOH
Output HIGH Voltage
VDD = Min., IOH = –1.0 mA
VOL
Output LOW Voltage
VDD = Min., IOL = 1.0 mA
VIH
Input HIGH Voltage
VIL
Input LOW Voltage⁽¹⁾
ILI
Input Leakage
GND ≤ VIN ≤ VDD
ILO
Output Leakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
Note:
1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
Min.
Max.
Unit
2.3
—
V
—
0.4
V
2.0 VDD + 0.3
V
–0.3
0.8
V
–2
2
µA
–2
2
µA
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
VDD = 3.3V + 10%
Symbol Parameter
Test Conditions
VOH
Output HIGH Voltage
VDD = Min., IOH = –4.0 mA
VOL
Output LOW Voltage
VDD = Min., IOL = 8.0 mA
VIH
Input HIGH Voltage
VIL
Input LOW Voltage⁽¹⁾
ILI
Input Leakage
GND ≤ VIN ≤ VDD
ILO
Output Leakage
GND ≤ VOUT ≤ VDD, Outputs Disabled
Note:
1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
Min.
Max.
Unit
2.4
—
V
—
0.4
V
2
VDD + 0.3
V
–0.3
0.8
V
–2
2
µA
–2
2
µA
4
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
05/10/06