IS62LV2568LL Datasheet, PDF (4/10 Pages) Integrated Silicon Solution, Inc – 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

IS62LV2568LL
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
VOH
Output HIGH Voltage VCC = Min., IOH = –1.0 mA
VOL
Output LOW Voltage
VCC = Min., IOL = 2.1 mA
VIH
Input HIGH Voltage
VIL
Input LOW Voltage⁽¹⁾
ILI
Input Leakage
GND ≤ VIN ≤ VCC
ILO
Output Leakage
GND ≤ VOUT ≤ VCC
Note:
1. VIL = –3.0V for pulse width less than 10 ns.
ISSI ^®
Min.
2.0
—
2.2
–0.3
–1
–1
Max.
—
0.4
VCC + 0.3
0.4
1
1
Unit
V
V
V
V
µA
µA
POWER SUPPLY CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
Test Conditions
-70
Min. Max.
-85
Min. Max.
ICC
Vcc Dynamic VCC = Max., CE = VIL
Com.
Operating
IOUT = 0 mA, f = fMAX
Ind.
Supply Current
—
30
—
35
—
25
—
30
ISB1
TTL Standby VCC = Max.,
Com.
Current
VIN = VIH or VIL,
Ind.
(TTL Inputs)
CE1 ≥ VIH or CE2 ≤ VIL, f = 0
—
0.4
—
1.0
—
0.4
—
1.0
ISB2
CMOS Standby VCC = Max., f = 0
Com.
Current
CE1 ≥ VCC – 0.2V,
Ind.
(CMOS Inputs) CE2 ≤ 0.2V,
or VIN ≥ VCC – 0.2V, VIN ≤ 0.2V
—
5
—
5
—
5
—
5
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Unit
mA
mA
µA
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
05/03/00