IS62LV2568LL Datasheet, PDF (3/10 Pages) Integrated Silicon Solution, Inc – 256K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

IS62LV2568LL
TRUTH TABLE
Mode
WE
Not Selected X
(Power-down) X
Output Disabled H
Read
H
Write
L
CE1 CE2 OE
H
XX
X
LX
L
HH
L
HL
L
HX
I/O Operation
High-Z
High-Z
High-Z
DOUT
DIN
Vcc Current
ISB1, ISB2
ISB1, ISB2
ICC
ICC
ICC
ISSI ^®
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
VCC
2.5V to 3.0V
2.5V to 3.0V
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameter
Value
Unit
VTERM Terminal Voltage with Respect to GND –0.5 to Vcc + 0.5 V
VCC
Vcc related to GND
–0.3 to +4.6
V
TBIAS
Temperature Under Bias
–40 to +85
°C
TSTG
Storage Temperature
–65 to +150
°C
PT
Power Dissipation
0.7
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
CAPACITANCE^(1,2)
Symbol Parameter
Conditions
Max.
CIN
Input Capacitance
VIN = 0V
6
COUT
Output Capacitance
VOUT = 0V
8
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.0V.
Unit
pF
pF
Integrated Silicon Solution, Inc. — 1-800-379-4774
3
Rev. B
05/03/00